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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1554
DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25ae
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 1 40 150 -55~150 ae ae V A A W UNIT V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=0.2A , IC=0 IC=3A IB=0.8A IC=3A IB=0.8A VCB=500V IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=3.5A ICP=3A ;IB1(end)=0.8A 0.5 8 3 95 MIN 5 5.0 TYP.
2SD1554
SYMBOL VEBO VCEsat VBEsat ICBO hFE fT COB VF tf
MAX
UNIT V
8.0 1.5 10 |I
V V A
MHz pF 2.0 1.0 |I V s
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1554
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
JMnic


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